Ambipolar Field-Effect Transistor of High Photoluminescent Material Tetraphenylpyrene (TPPy) Single Crystal
- 1 June 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (6L) , L596
- https://doi.org/10.1143/jjap.46.l596
Abstract
An ambipolar field-effect transistor (FET) based on a 1,3,6,8-tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 x 10(-2) cm(2)/(V center dot s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operationKeywords
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