Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure
- 15 March 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (12) , R7607-R7609
- https://doi.org/10.1103/physrevb.53.r7607
Abstract
We report the dependence of the second-harmonic spectrum of Si(001) metal-oxide-semiconductor structures on applied bias in the vicinity of the direct two-photon transition. Bulk nonlinear electroreflectance contributions peak at 3.37 eV; the surface dipole contribution peaks at 3.26 eV.
Keywords
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