Identification of strained silicon layers at Si-interfaces and clean Si surfaces by nonlinear optical spectroscopy
- 23 August 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 71 (8) , 1234-1237
- https://doi.org/10.1103/physrevlett.71.1234
Abstract
Optical second-harmonic and sum-frequency spectra of clean and oxidized Si(100) and Si(111) samples reveal a strong resonance band at 3.3 eV photon energy. It is concluded that the resonance arises from direct transitions between valence and conduction band states in a few monolayers of strained silicon at the Si- interface and at the selvedge of clean reconstructed silicon surfaces.
Keywords
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