Interface quantum well states observed by three-wave mixing in ZnSe/GaAs heterostructures
- 22 June 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (25) , 3761-3764
- https://doi.org/10.1103/physrevlett.68.3761
Abstract
Three-wave mixing was used to spectroscopically probe the interface electronic structure of a buried ZnSe/GaAs[001] heterointerface from 1.3 to 4.3 eV. An unusual resonance at 2.72 eV was observed and assigned to a virtual transition between the valence band of ZnSe and a quantum well state at the buried heterointerface. This assignment was confirmed by experiments that combine three-wave mixing with photoinduced band bending. The experiments also indicate the resonance may be a useful probe of defects at the buried interface.Keywords
This publication has 22 references indexed in Scilit:
- Blue-green laser diodesApplied Physics Letters, 1991
- Surface stoichiometry effects on ZnSe/GaAs heteroepitaxyJournal of Crystal Growth, 1991
- Second-harmonic generation in odd-period, strained, (Si(Ge/Si superlattices and at Si/Ge interfacesPhysical Review Letters, 1990
- Electronic transitions at the/Si(111) interface probed by resonant three-wave mixing spectroscopyPhysical Review Letters, 1989
- Observation of Interface Band Structure by Ballistic-Electron-Emission MicroscopyPhysical Review Letters, 1988
- Cathodoluminescence spectroscopy of metal–semiconductor interface structuresJournal of Vacuum Science & Technology A, 1988
- Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopyPhysical Review Letters, 1988
- Structural characterization of GaAs/ZnSe interfacesJournal of Vacuum Science & Technology B, 1988
- Probing the buried metal-semiconductor interface by optical second harmonic generation: Au on Si(1 1 1) and Si(1 0 0)Solid State Communications, 1986
- Anisotropies in the Above—Band-Gap Optical Spectra of Cubic SemiconductorsPhysical Review Letters, 1985