Evolution of the microstructure of Au(Zn) metallization during formation of an ohmic contact to p-type GaAs
- 1 June 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 246 (1-2) , 143-150
- https://doi.org/10.1016/0040-6090(94)90743-9
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Quantitative analysis of arsenic losses during the formation of Au(Zn)/p-GaAs ohmic contactsJournal of Applied Physics, 1993
- Structural characterization of encapsulated Au/Zn/Au ohmic contacts to p-type GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Mechanism of forming ohmic contacts to GaAsApplied Physics Letters, 1991
- Ohmic contacts to III–V compound semiconductorsThin Solid Films, 1990
- New models for ohmic contacts to GaAsThin Solid Films, 1988
- Fundamental and practical aspects of alloying encapsulated gold-based contacts to GaAsThin Solid Films, 1987
- Interaction of Au/Zn/Au sandwich contact layers with AIIIBV compound semiconductorsSolid-State Electronics, 1986
- Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAsSolid-State Electronics, 1985
- Ohmic contacts to GaAsThin Solid Films, 1983
- Low resistance ohmic contacts to n- and p-InPSolid-State Electronics, 1981