Anomalous silicon and tin doping behavior in indium phosphide grown by chemical beam epitaxy
- 16 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (16) , 1546-1548
- https://doi.org/10.1063/1.103170
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxyApplied Physics Letters, 1988
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- Doping studies using thermal beams in chemical-beam epitaxyJournal of Applied Physics, 1986
- Chemical beam epitaxy of InP and GaAsApplied Physics Letters, 1984
- Tin phosphide as a phosphorus beam source for molecular beam epitaxyApplied Physics Letters, 1984