Spin diffusion in doped semiconductors: the role of Coulomb interactions

Preprint

14 June 2001

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0007197

Abstract

We examine the effect of the Coulomb interaction on the mobility and diffusion of spin packets in doped semiconductors. We find that the diffusion constant is reduced, relative to its non-interacting value, by the combined effect of Coulomb-enhanced spin susceptibility and spin Coulomb drag. In ferromagnetic semiconductors, the spin diffusion constant vanishes at the ferromagnetic transition temperature.

Keywords

DOPED SEMICONDUCTORS
DIFFUSION CONSTANT
SPIN DIFFUSION
SEMICONDUCTORS
FERROMAGNETIC
MOBILITY
COULOMB

All Related Versions

Version 1, 2000-07-11, ArXiv
Version 2, 2000-08-10, ArXiv
Version 3, 2001-02-26, ArXiv
Version 4, 2001-06-14, ArXiv
Published version: Europhysics Letters, 55 (4), 566.

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