Spin diffusion in doped semiconductors: the role of Coulomb interactions
Abstract
We examine the effect of the Coulomb interaction on the mobility and diffusion of spin packets in doped semiconductors. We find that in the paramagnetic state the diffusion constant is it reduced, relative to its non-interacting value, by the combined effect of Coulomb-enhanced spin susceptibility and spin Coulomb drag. In ferromagnetic semiconductors, however, the diffusion constant can be greatly enhanced due to the high value of the longitudinal spin stiffness of the spin-polarized carriers.Keywords
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