Determination of dopant-concentration diffusion length and lifetime variations in silicon by scanning electron microscopy
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3433-3440
- https://doi.org/10.1063/1.326336
Abstract
Compositional variations in Czochralski‐grown silicon doped at levels above 1018/cm3 were observed with SEM in the EBIC mode employing large‐area shallow p‐n junctions. The EBIC contrast attributed to minority‐carrier diffusion‐length variations was related to dopant‐concentration variations. Quantitative determination of dopant concentration, diffusion length, and lifetime variations on a microscale was obtained from the analysis of electron‐beam‐induced current measurements employing a model based on steady‐state low‐level excitation of minority carriers by the electron beam and on a phenomenological depth‐dose function.This publication has 14 references indexed in Scilit:
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