Bipolar Microwave Linear Power Transistor Design
- 1 May 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 27 (5) , 423-430
- https://doi.org/10.1109/tmtt.1979.1129643
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- A power bipolar transistor optimized for linear performance with octave capabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Transistor design for low distortion at high frequenciesIEEE Transactions on Electron Devices, 1976
- A new concept of ballasting mechanisms of microwave power transistors in class C operationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1974
- Thermal properties of very fast transistorsIEEE Transactions on Electron Devices, 1970
- Ultralinear UHF power transistors for CATV applicationsProceedings of the IEEE, 1970
- Avalanche injection and second breakdown in transistorsIEEE Transactions on Electron Devices, 1970
- Some limitations of the power output capability of VHF transistorsIEEE Transactions on Electron Devices, 1968