Calculation of theElectron-Phonon and Hole-Phonon Scattering Matrix Elements in Silicon
- 8 February 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (6) , 413-416
- https://doi.org/10.1103/physrevlett.48.413
Abstract
With use of the "rigid-pseudoion" model, the first calculation of the electron-phonon and hole-phonon scattering matrix elements for the TO, LO, TA, and LA phonon-assisted indirect transitions () in Si has been performed. Excellent agreement with experimental values for the TO phonon is found. Based on the present results, the intensities of the entire indirect spectrum of this material can be accurately described, thereby rigorously testing the model.
Keywords
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