Simple method of measuring drift-mobility profiles in thin semiconductor films
- 13 May 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (10) , 240-242
- https://doi.org/10.1049/el:19760186
Abstract
A simple method of measuring drift-mobility profiles in semiconductor films is described. It is based on the low-frequency measurement of the transconductance and gate capacitance of an f.e.t. structure as a function of gate bias. Drift mobilities of 4000 to 5000 cm2/Vs have been measured on n-type GaAs films with 1016 to 1017 cm−3 doping levels.Keywords
This publication has 1 reference indexed in Scilit:
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975