Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode
- 1 March 1998
- journal article
- Published by Springer Nature in Optical Review
- Vol. 5 (2) , 69-71
- https://doi.org/10.1007/s10043-998-0069-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Experimental analysis of characteristic temperature in quantum-well semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodesIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Room-temperature continuous-wave operation of GaInNAs/GaAslaser diodeElectronics Letters, 1996
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996