Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)
- 13 June 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (24) , 3288-3290
- https://doi.org/10.1063/1.111312
Abstract
This study demonstrates the presence of a negative electron affinity (NEA) surface on AlN was grown on α(6H)-SiC. Heteroepitaxial AlN was grown on α(6H)-SiC(0001) substrates by molecular beam epitaxy techniques. The surface electronic states were characterized by ultraviolet photoemission obtained at surface normal. The observation of a sharp spectral feature at the lowest energy of the emitted electrons is an indication of a surface with a negative electron affinity. In addition, the trend of the NEA feature was examined as a function of annealing. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.Keywords
This publication has 12 references indexed in Scilit:
- Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfacesPhysical Review B, 1994
- Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxyJournal of Materials Research, 1993
- Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxyApplied Physics Letters, 1993
- Argon and hydrogen plasma interactions on diamond (111) surfaces: Electronic states and structureApplied Physics Letters, 1993
- Schottky barrier height and negative electron affinity of titanium on (111) diamondJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Negative electron affinity based vacuum collector transistorJournal of Applied Physics, 1992
- Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipmentReview of Scientific Instruments, 1990
- The diamond surface: atomic and electronic structureSurface Science, 1986
- Photoemission and photon-stimulated ion desorption studies of diamond(111): HydrogenJournal of Vacuum Science and Technology, 1982
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979