Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy
- 1 September 1993
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 8 (9) , 2310-2314
- https://doi.org/10.1557/jmr.1993.2310
Abstract
Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)–SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C. The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented AlN(0001) films.Keywords
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