Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy
- 17 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (7) , 824-826
- https://doi.org/10.1063/1.107430
Abstract
Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C2H2) gas molecular beams in a high vacuum was carried out. On 6H-SiC(0001̄) substrates, epilayers of 3C-SiC(1̄1̄1̄) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(01̄14̄) substrates even at low temperatures down to 850 °C.Keywords
This publication has 4 references indexed in Scilit:
- Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on SiJapanese Journal of Applied Physics, 1991
- Crystal growth of SiC by step-controlled epitaxyJournal of Crystal Growth, 1990
- Atomic level control in gas source MBE growth of cubic SiCJournal of Crystal Growth, 1990
- Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructureJournal of Crystal Growth, 1989