Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
- 1 June 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (6B) , L1086-1088
- https://doi.org/10.1143/jjap.30.l1086
Abstract
Carbonization of Si surfaces using hydrocarbon gas molecular beams was investigated. In the case of carbonizing bare Si surfaces with C2H2, single-crystalline 3C-SiC layers were obtained only in the narrow range of a substrate temperature near 780°C. Among various surface treatments, the existence of a surface oxide layer and temperature rise during carbonization is proved to be effective in reproducibly obtaining single-crystalline 3C-SiC layers.Keywords
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