THE GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON
- 1 July 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (1) , 12-13
- https://doi.org/10.1063/1.1754939
Abstract
Thin single‐crystal films of cubic silicon carbide have been grown on silicon substrates within the temperature range 800‐ 1000°C in high and ultrahigh vacuum by the reaction of unsaturated hydrocarbons, C2H and C2H4 with silicon. The cubic silicon carbide grows with a parallel orientation onto silicon, regardless of crystal orientation. The use of ultrahigh vacuum results in high crystal perfection.Keywords
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