Cubic β-silicon carbide films on silicon substrates
- 1 November 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (11) , 839-842
- https://doi.org/10.1016/0038-1101(65)90093-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- TriPyramid Growth of Epitaxial SiliconJournal of the Electrochemical Society, 1965
- On SiC contamination of silicon epitaxial waferSolid-State Electronics, 1964
- Growth of α-SiC Single Crystals from Chromium SolutionJournal of the Electrochemical Society, 1964
- Evidence for Oxidation Growth at the Oxide-Silicon Interface from Controlled Etch StudiesJournal of the Electrochemical Society, 1964
- Structure Defects in Pyrolytic Silicon Epitaxial FilmsJournal of Applied Physics, 1963
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959
- Properties of Gold-Doped SiliconPhysical Review B, 1957
- Electronic Conduction in Silicon CarbideThe Journal of Chemical Physics, 1953