The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9R)
- https://doi.org/10.1143/jjap.25.1307
Abstract
The growth of a single crystal of 3C-SiC on a Si substrate by the MBE method has been performed. A single-crystal film can be grown at a substrate temperature T sub=1150°C. This temperature is relatively low compared to that used in other methods. The diffused Si from a substrate plays an important part in the crystal growth of SiC, especially for a very thin film. The individual intensity of Si and C molecular beams (J Si and J C) and their intensity ratio J Si/J C should be selected with suitable values in accordance with the film thickness, considering the growth condition of the MBE method.Keywords
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