Morphology and growth rate oF β-SiC grown on (100) silicon by chemical vapor deposition
- 31 July 1989
- journal article
- Published by Elsevier in Materials Letters
- Vol. 8 (6-7) , 209-211
- https://doi.org/10.1016/0167-577x(89)90105-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide filmsJournal of Applied Physics, 1986
- Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substratesJournal of Applied Physics, 1986
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983