Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films
- 15 October 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (8) , 2897-2903
- https://doi.org/10.1063/1.337075
Abstract
The effects of the Si/(Si+C) ratio in the reaction gas stream on the growth and properties of monocrystalline β-SiC films grown on Si(100) substrates via chemical vapor deposition have been theoretically and experimentally studied. The amounts of condensed phases of β-SiC and Si, and the partial pressures of the remaining Si and C-containing gases as a function of the Si/(Si+C) ratio in the source gases have been initially obtained from thermodynamic calculations using the ‘‘solgasmix-pv’’ computer program. Complementary and comparative experimental growth studies have shown that inclusion-free films having maximum values in growth rate and carrier concentration and a minimum value of resistivity were obtained near Si/(Si+C)=0.5.This publication has 16 references indexed in Scilit:
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