Thermal conductivity and electrical properties of 6H silicon carbide
- 1 September 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (9) , 5790-5794
- https://doi.org/10.1063/1.326720
Abstract
Thermal conductivity measurements of 6H SiC crystals were done in the 300–500 K range by means of radiation thermometry. Both p‐ and n‐type crystals with carrier concentrations in the 8×1015 to 1020 cm−3 range were used. For the purest samples it was found that the thermal conductivity normal to the c axis is proportional to T−1.49, the room‐temperature value being 3.87 W/cm deg. It was also found that the thermal conductivity parallel to the c axis is about 30% lower than that normal to the c axis. Electrical data in the 100–1000 K range are also presented.This publication has 9 references indexed in Scilit:
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