Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystals
- 1 December 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 70 (1-2) , 291-294
- https://doi.org/10.1016/0022-0248(84)90276-8
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on SiApplied Physics Letters, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substratesIEEE Transactions on Electron Devices, 1981
- Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate LayerJournal of the Electrochemical Society, 1980
- The formation of ß SiC on SiJournal of Electronic Materials, 1980
- High-resolution spectra of cool stars in the 10- and 20-micron regions.The Astrophysical Journal, 1974
- Growth morphology and crystallographic orientation of β-SiC films formed by chemical conversionThin Solid Films, 1970