Growth morphology and crystallographic orientation of β-SiC films formed by chemical conversion
- 1 March 1970
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 5 (3) , 145-155
- https://doi.org/10.1016/0040-6090(70)90073-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal StructureJapanese Journal of Applied Physics, 1966
- Rates of Formation of Thermal Oxides of SiliconJournal of the Electrochemical Society, 1964
- Epitaxial Growth of Silicon from the Pyrolysis of Monosilane on Silicon SubstratesJournal of the Electrochemical Society, 1963
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959
- The Thermal Decomposition of SilaneJournal of the American Chemical Society, 1936