A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs

22 March 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 5.2.1-5.2.4
https://doi.org/10.1109/iedm.2003.1269179

Abstract

We demonstrate SiGe:C pnp HBTs in a complementary bipolar CMOS flow with f/sub T//f/sub max/ values of 80 GHz/120 GHz at BV/sub CEO/ = 2.6 V and a ring oscillator delay of 8.9 ps. The simultaneously fabricated npn HBTs sustain no significant performance loss compared to the npn-only BiCMOS, confirmed by f/sub T//f/sub max/ values of 180 GHz/185 GHz and a ring oscillator delay of 4.6 ps. A pnp-only BiCMOS flow produces peak f/sub T//f/sub max/ values for pnp devices of 115 GHz/115 GHz. The high speed performance of the pnp transistors surpasses the best reported values of this transistor type substantially.

Keywords

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