Novel collector design for high-speed SiGe:C HBTs

26 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 775-778
https://doi.org/10.1109/iedm.2002.1175953

Abstract

We describe a novel collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation. f/sub T/ values of 200 GHz at BV/sub CEO/=2.0 V and ring oscillator delays of 4.3 ps are obtained. Excellent static characteristics and high yield were achieved for the HBT module integrated in a 0.25 /spl mu/m CMOS platform.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
PROTECTION
FABRICATION
ION IMPLANTATION
RING OSCILLATORS
DELAY
CMOS PROCESS
OXIDATION
IMPLANTS
RESISTORS

This publication has 2 references indexed in Scilit:

Prediction of thermal resistance in trench isolated bipolar device structures
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technology
IEEE Electron Device Letters, 2002