Focused ion beam implantation for opto- and microelectronic devices
- 1 July 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (4) , 2562-2566
- https://doi.org/10.1116/1.590210
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- First order gain-coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantationApplied Physics Letters, 1996
- First order gain and index coupled distributed feedback lasers in ZnSe-based structures with finely tunable emission wavelengthsApplied Physics Letters, 1996
- First-order gain-coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and in situ overgrowthJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Minimum feature sizes and ion beam profile for a focused ion beam system with post-objective lens retarding and acceleration modeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Photoluminescence study of implantation-induced intermixing of In0.53Ga0.47As/InP single quantum wells by argon ionsJournal of Applied Physics, 1993
- Observation of tunneling phenomena and the charging effect through small constricted regions in semiconductors fabricated with a focused ion beam at 4.2 KPhysical Review B, 1992
- Ultralow chirping short optical pulse (16 ps) generation in gain-coupled distributed feedback semiconductor lasersApplied Physics Letters, 1991
- Gain-coupled DFB lasers versus index-coupled and phase shifted DFB lasers: a comparison based on spatial hole burning corrected yieldIEEE Journal of Quantum Electronics, 1991
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam ImplantationJapanese Journal of Applied Physics, 1986
- Coupled-Wave Theory of Distributed Feedback LasersJournal of Applied Physics, 1972