Enhanced interband recombination in Pb1−xSnxTe
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9) , 3965-3968
- https://doi.org/10.1063/1.322146
Abstract
Photoconductive measurements have been performed on Pb1−xSnxTe in the small‐energy‐gap region. Experimentally observed shortening of the photoconductive lifetime is inferred to occur as a result of strong coupling of photoexcited carriers to some elementary excitations (phonon and phonon‐plasmon modes) in the material. Applications to fast infrared detectors are discussed.This publication has 12 references indexed in Scilit:
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