A new technique for growing epitaxial films of Pb1−xSnxTe
- 31 December 1974
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 9 (12) , 1639-1646
- https://doi.org/10.1016/0025-5408(74)90155-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Annealing studies of PbTe and Pb1−xSnxTeJournal of Applied Physics, 1973
- Photoconductive properties of PbTe and Pb0.8Sn0.2Te epitaxial filmsPhysica Status Solidi (a), 1972
- Thick Epitaxial Films of Pb1−xSnxTeJournal of Vacuum Science and Technology, 1972
- Compensation and ionized defect scattering in PbTeSolid State Communications, 1970
- Epitaxial Growth of Lead Tin TellurideJournal of Applied Physics, 1970
- Applicability of Vegard's Law to the PbxSn1−xTe Alloy SystemJournal of Applied Physics, 1969