Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells
- 22 August 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (8) , 1024-1026
- https://doi.org/10.1063/1.112141
Abstract
We have observed a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells with Shubnikov–de Haas measurements. The saturated reduction of the electron density in the InAs well was about 10%. The electron effective mass was found to be (0.048±0.004) m0 for an electron density of 18.0×1011 cm−2. The electron quantum lifetime decreased as the electron density was reduced by the negative persistent photoconductivity effect due to electron‐hole interaction.Keywords
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