The structure of GexSi1−x/Si strained layer superlattices and heterostructures
- 1 January 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 48-49, 356-360
- https://doi.org/10.1016/0169-4332(91)90357-p
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- XPS and AES analysis of Si/Ge heterostructure interfacePhysica Scripta, 1990
- Compound-Semiconductor TransistorsPhysics Today, 1986
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Raman scattering in GeSi alloysSolid State Communications, 1973