Vidicon target of a p-i-n structure using a-Si:H
- 1 December 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (12) , 6422-6423
- https://doi.org/10.1063/1.327591
Abstract
A vidicon target of a p‐i‐n structure has been fabricated using amorphous silicon prepared by a rf glow discharge of silane (SiH4). A thin layer of n‐type a‐silicon doped with phosphorus was provided between a photosensitive layer and a substrate coated with a transparent electrode (SnO2:Sb) to prohibit injection of holes. An excellent photoresponse was attained for visible light.This publication has 3 references indexed in Scilit:
- A-Si thin film as a photo-receptor for electrophotographyJournal of Non-Crystalline Solids, 1980
- Photoconductive imaging using hydrogenated amorphous silicon filmApplied Physics Letters, 1979
- Amorphous-silicon field-effect device and possible applicationElectronics Letters, 1979