Effect of Strain Compensation on Crystalline Quality for InGaAs/InAlP Strained Multiple Quantum Well Structures on InP Grown by Gas-Source Molecular Beam Epitaxy

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Abstract
Crystalline quality is investigated for highly compressive strained multiple quantum well (MQW) structures, with and without strain compensation. Strain compensation is created by tensile strain in the barrier layers of the InGaAs/InAlP system grown by gas-source molecular beam epitaxy on InP substrates. Detailed invesligations on the effects of strain compensation on the structural properties, optical properties and thermal stability for strained MQWs show that strain compensation produces high-quality strained MQW with very few misfit dislocations and excellent thermal stability. Strained MQWs without strain compensation have many misfit dislocations which are enhanced by thermal annealing.