Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining
- 20 June 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (25) , 2145-2147
- https://doi.org/10.1063/1.99559
Abstract
An experimental technique for the measurement of two-dimensional impurity diffusion profiles in silicon has been developed. Both the lateral and in-depth extent of dopant diffusion under a mask edge are magnified mechanically by sawing and angle lapping, and the magnified junction contour is delineated by chemical staining. The two-dimensional shape of the junction is reconstructed from the measured stained contour. A complete diffusion profile consisting of several isoconcentration contours can be obtained by measuring the junction shape on a series of samples with increasing substrate resistivities, provided the doping level in the substrate does not affect the diffusion of the impurity under study. Results of the two-dimensional diffusion of boron in silicon at 1050 °C are presented.Keywords
This publication has 5 references indexed in Scilit:
- Direct Observations of n‐MOSFET Channel LengthsJournal of the Electrochemical Society, 1987
- Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistorsApplied Physics A, 1986
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982
- Delineation of Shallow Junctions in Silicon by Transmission Electron MicroscopyJournal of the Electrochemical Society, 1981
- Apparatus for the Measurement of Small AnglesReview of Scientific Instruments, 1972