Semiconductor Material Evaluation by Means of Schottky Contacts
- 1 January 1979
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- A new graphite boat construction for the LPE growth of thin GaAs layers with a new techniqueJournal of Crystal Growth, 1977
- The influence of debye length on the C-V measurement of doping profilesIEEE Transactions on Electron Devices, 1971
- Der zusammenhang zwischen metall-halbleiter-barrieren-höhe und elektronegativität sowie kernladungszahl des metallesSolid-State Electronics, 1970
- Diode edge effect on doping-profile measurementsIEEE Transactions on Electron Devices, 1970
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Auger effect in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942