Amorphous-crystal silicon interfaces: structure and movement under ion beam irradiation
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 56-58, 577-588
- https://doi.org/10.1016/0169-4332(92)90305-h
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Ion-beam-induced epitaxial crystallization and amorphization in siliconMaterials Science Reports, 1990
- Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous siliconPhysical Review B, 1990
- Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in siliconJournal of Materials Research, 1988
- A defect model for ion-induced crystallization and amorphizationJournal of Materials Research, 1988
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Role of Electronic Processes in Epitaxial Recrystallization of Amorphous SemiconductorsPhysical Review Letters, 1983
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978