Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon
- 1 December 1988
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 3 (6) , 1208-1211
- https://doi.org/10.1557/jmr.1988.1208
Abstract
The ion-bombardment-induced reversible movement of a planar amorphous/crystalline interface in silicon has been studied between 100 and 400 °C. The temperature dependence of the ion dose rate at which there is zero interface movement has an activation energy of 1.2 eV, the dissociation energy of divacancies. Scaling of this dose rate for different ion species exhibits a quadratic dependence on the density of displaced atoms in the collision cascade of individual ions, giving further evidence for divacancy control of the interface movement.Keywords
This publication has 11 references indexed in Scilit:
- Ion-beam induced crystallization and amorphization at a crystalline/amorphous interface in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphirePhysical Review B, 1984
- Novel low-temperature recrystallization of amorphous silicon by high-energy ion beamApplied Physics Letters, 1982
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Ion-beam induced epitaxy of siliconPhysics Letters A, 1979
- Radiation enhanced annealing of radiation damage in GeRadiation Effects, 1975
- Radiation damage in ge produced by noble gas ions investigated by the secondary electron emission methodRadiation Effects, 1975
- Relation of neutron to ion damage annealing in Si and GeRadiation Effects, 1969