Selective reactive ion etching of InGaAs/InAlAs heterostructures in HBr plasma
- 31 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (22) , 2830-2832
- https://doi.org/10.1063/1.109224
Abstract
A reactive ion etching process using HBr plasma has been developed for the selective removal of InGaAs on InAlAs. Etch rates of 110 and 0.67 Å/min are obtained for InGaAs and InAlAs, respectively, at a plasma self‐bias voltage of −100 V, a chamber pressure of 120 mTorr, and a HBr flow rate of 10 sccm. This translates to an etch selectivity of over 160 which is the highest that has been obtained for this material system. The etch stop mechanism on the InAlAs is deduced from x‐ray photoelectron spectroscopy to be due to involatile Al2O3 that is formed by residual O2 and/or H2O vapor in the chamber. It is shown that the surface of the etched InAlAs can be restored to the state prior to HBr etching by sequential rinsing in dilute HCl and H2O. This process should be useful for the fabrication of InAlAs/InGaAs heterostructure field‐effect transistors.Keywords
This publication has 9 references indexed in Scilit:
- Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layersJournal of Electronic Materials, 1993
- InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recessIEEE Electron Device Letters, 1992
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessingIEEE Electron Device Letters, 1992
- Highly uniform N-InAlAs/InGaAs HEMT's on a 3-in InP substrate using photochemical selective dry recess etchingIEEE Electron Device Letters, 1992
- Selective reactive ion etching for short-gate-length GaAs/AlGaAs/InGaAs pseudomorphic modulation-doped field-effect transistorsJournal of Vacuum Science & Technology B, 1989
- Selective dry etching of GaAs over AlGaAs in SF6/SiCl4 mixturesJournal of Vacuum Science & Technology B, 1988
- An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl2F2 plasmaJournal of Applied Physics, 1987
- Performance of heterostructure FET's in LSIIEEE Transactions on Electron Devices, 1986