InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess
- 1 October 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (10) , 525-527
- https://doi.org/10.1109/55.192822
Abstract
Excellent uniformity in the threshold voltage, transconductance, and current-gain cutoff frequency of InAlAs/InGaAs/InP MODFETs has been achieved using a selective wet gate recess process. An etch rate ratio of 25 was achieved for InGaAs over InAlAs using a 1:1 citric acid:H/sub 2/O/sub 2/ solution. By using this solution for gate recessing, the authors have achieved a threshold voltage standard deviation of 15 mV and a transconductance standard deviation of 15 mS/mm for devices across a quarter of a 2-in-diameter wafer. The average threshold voltage, transconductance, and current-gain cutoff frequency of 1.0- mu m gate-length devices were -234 mV, 355 mS/mm, and 32 GHz, respectively.Keywords
This publication has 9 references indexed in Scilit:
- Selective wet etching for InGaAs/InAlAs/InP heterostructure field-effect transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessingIEEE Electron Device Letters, 1992
- Highly uniform N-InAlAs/InGaAs HEMT's on a 3-in InP substrate using photochemical selective dry recess etchingIEEE Electron Device Letters, 1992
- A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/lnGaAs pseudomorphic MODFETsJournal of Electronic Materials, 1992
- OMVPE-grown InAlAs/InGaAs/InP MODFET's with performance comparable to those grown by MBEIEEE Transactions on Electron Devices, 1992
- 0.23 μm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPEElectronics Letters, 1991
- Selectively dry-etched n/sup +/-GaAs/N-InAlAs/InGaAs HEMTs for LSIIEEE Electron Device Letters, 1990
- Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and HeJournal of Vacuum Science & Technology B, 1988
- High-performance submicrometer AlInAs-GaInAs HEMT'sIEEE Electron Device Letters, 1988