Small-signal modulation characteristics of self-organized quantum dot separate confinement heterostructure and tunneling injection lasers
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (10928081) , 498-499
- https://doi.org/10.1109/leos.1997.645537
Abstract
We have characterized the dynamic properties of single- and multi-dot layer (to enhance the confinement factor) single mode self-assembled InGaAs-GaAs quantum dot lasers at room temperature. In particular, we have investigated tunneling injection of electrons in quantum dot lasers, as a means to overcome the carrier relaxation bottleneck, for the first time.Keywords
This publication has 8 references indexed in Scilit:
- Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laserIEEE Photonics Technology Letters, 1997
- Severe gain suppression due to dynamic carrier heating in quantum well lasersApplied Physics Letters, 1997
- Tunneling injection lasers: a new class of lasers with reduced hot carrier effectsIEEE Journal of Quantum Electronics, 1996
- Room temperature lasing from InGaAs quantum dotsElectronics Letters, 1996
- Room-temperature operation of In 0.4 Ga 0.6 As/GaAsself-organised quantum dot lasersElectronics Letters, 1996
- InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization PropertiesJapanese Journal of Applied Physics, 1996
- Impedance characteristics of quantum-well lasersIEEE Photonics Technology Letters, 1994
- Effect of spectral broadening and electron-hole scattering on carrier relaxation in GaAs quantum dotsApplied Physics Letters, 1994