Ion implantation damage in GaAs: A TEM study of the variation with ion species and stoichiometry
- 1 June 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (6) , 859-863
- https://doi.org/10.1016/0038-1101(78)90310-6
Abstract
No abstract availableKeywords
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