Ion implantation in compound semiconductors–an approach based on solid state theory

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Abstract
The difficulties in obtaining well defined electrically active layers by ion implantation in gallium arsenide, and other bindary compound semiconductors, as compared with silicon, are discussed. An examination from first principles, in terms of the chemistry of the defect solid state, points to several complications which follow immediately from the existence of two sub-lattices in these compounds, and it is shown that these effects may be responsible for many of the problems reported in the literature. The use of carefully matched dual implants is proposed as a technique which takes account of the special requirements of compound semiconductors, and should thus lead to improved results. The need for better characterization of the substrate material, and close control of annealing stages, in order to optimize the advantages of the technique, is also emphasized.