THE PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS
- 1 November 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (9) , 295-297
- https://doi.org/10.1063/1.1652619
Abstract
It has been found that ion implantation doping results in the generation and diffusion of defect species, forming deep trapping levels. The effect of these levels on the electrical characteristics of zinc‐implanted GaAs diodes has been observed for the case of 70‐kV implantation at 400°C into substrates with n‐type concentrations ranging from 1 × 1016 to 1.8 × 1018 atoms/cm3. Capacitance‐voltage measurements have indicated the presence of a semi‐insulating layer in the diodes, varying in thickness from 0.18 μ for the most heavily doped substrate to 2.7 μ for the lightest. Frequency dependence of the junction capacitance and power law variation of forward current vs voltage have also been observed and are attributed to deep levels.Keywords
This publication has 3 references indexed in Scilit:
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968
- Zn and Te Implantations into GaAsJournal of Applied Physics, 1967
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964