Increase in Nonradiative Recombination Lifetimes in Semi-Insulating GaAs Observed by a Photoacoustic Technique
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3A) , L159
- https://doi.org/10.1143/jjap.26.l159
Abstract
Large increases in nonradiative recombination lifetimes were observed for the first time in a In-doped semi-insulating GaAs. The variation ratio of the lifetime increase is over 180 for the incident optical power of 8 mW/cm2. The increase in the diffusion length associated with the lifetime increase in the bulk is also indicated.Keywords
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