Conductance transient spectroscopy of metal-semiconductor field effect transistors
- 1 March 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (5) , 1931-1936
- https://doi.org/10.1063/1.338040
Abstract
We have performed conductance deep-level transient spectroscopy experiments on planar gate structure GaAs MESFETs (metal-semiconductor field-effect transistors) using positive and negative filling pulses and, in some cases, under light exposure. We present a simple surface model which accurately describes the main features of the experimental data. We discuss the differences between the predictions of the model and the experimental results.This publication has 5 references indexed in Scilit:
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