Kinetics of defect creation in hydrogenated amorphous silicon by light pulses
- 1 September 1993
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 68 (3) , 159-165
- https://doi.org/10.1080/09500839308240958
Abstract
The creation of metastable defects in hydrogenated amorphous silicon subjected to laser pulses with laser pulse energy density in the range U = (2.5–33) 10−3 J cm−2 has been investigated. After a rise time nearly independent of U, saturation of the defect density N sat is observed, and N sat varies linearly with U in the range of energies considered. A model including the light-induced annealing of defects fits the present experimental data.Keywords
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