Saturation of the light-induced defect density in hydrogenated amorphous silicon
- 18 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (25) , 2658-2660
- https://doi.org/10.1063/1.101965
Abstract
We report new experimental results on the saturation of the light‐induced defect density in hydrogenated (and fluorinated) amorphous silicon. The films were illuminated near room temperature up to 5000 h with bandpass filtered red light at a carrier generation rate G of 5×1020 cm−3 s−1, or up to 20 h with Kr+ laser light (λ=647.1 nm) at G=3×1022 cm−3 s−1. The bulk defect densities Ns saturate in both cases in the vicinity of 1017 cm−3. The saturation values are almost independent either of G or of temperature in the range from room temperature to about 70 °C. The illumination time to reach saturation is approximately proportional to 1/G2. These results are discussed within the framework of existing models for the light‐induced defects.Keywords
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