Kinetics of the metastable optically induced ESR ina-Si:H
- 1 January 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (1) , 100-105
- https://doi.org/10.1103/physrevb.31.100
Abstract
The kinetics of a metastable, optically induced increase in the ESR in a-Si:H have been examined between 77 and ∼500 K. Isothermal annealing (decay) and inducing (growth) curves indicate that the decay is bimolecular and thermally activated with an activation energy of ∼1 eV, and the growth is relatively temperature independent. These kinetics are more easily explained through the optical rearrangement of charge in existing dimagnetic (negative-U) defects and less easily in terms of the optical creation of additional, paramagnetic localized states in the gap.Keywords
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