Light-induced dangling bonds in hydrogenated amorphous silicon
- 15 March 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (6) , 456-458
- https://doi.org/10.1063/1.92402
Abstract
After intensive and long illumination of undoped a‐Si:H samples the dark ESR signal is considerably enhanced. The g value of 2.0055 and the linewidth DHpp = 6–7 G leads to the conclusion that the light‐induced defects are single dangling bonds. They disappear again by thermal anneal at about 220 °C.Keywords
This publication has 9 references indexed in Scilit:
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Defect creation and hydrogen evolution in amorphous Si:HJournal of Non-Crystalline Solids, 1980
- The influence of spin defects on recombination and electronic transport in amorphous siliconPhilosophical Magazine Part B, 1980
- Proton Magnetic Resonance Spectra of Plasma-Deposited Amorphous Si: H FilmsPhysical Review Letters, 1980
- Photoemission studies on in situ prepared hydrogenated amorphous silicon filmsPhilosophical Magazine Part B, 1979
- The influence of the exchange interaction on the E.S.R. linewidth in amorphous siliconPhilosophical Magazine Part B, 1979
- Interstitial doping of amorphous siliconApplied Physics Letters, 1977
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977